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| ! "##$"%$&' ( ( ) *+* , - " . & /) % ) 0"%1 % %23 # 11 , ) - ) ( # ! ! ! ! "#$ %$ &! ' ! ! ( %$ )! * * +$ * ) , - ! )! * * , . / $01 %2#$ + * )! 3!. ! !! & $45 . )1 " 1 6+ & ! $45 . )1 " 1 # & " ! 0+ , - ! 3!. ! !! 3 $45 . )1 7"! ) % - ) 1 (% 6$ ) , - ! )! ,.! , , . / %$ 1 ( 88$ 9 :! / ! ! 3!. ! * * 3 3 1 , ! 0$0; * )! !! * * 1 , ! 00 ' ( % 451 * %$* 0$$ 3 /! ( ( 0% 29 ( ( 0 ! "#$ forward voltage 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 DE5S6M tc=150 c [max] tc=25 c [max] pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a] 100 1000 DE5S6M 0.1 1 10 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tc=25 c typ per diode junction capacitance reverse current 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 60 DE5S6M tc=150 c [max] tc=150 c [typ] pulse measurement per diode tc=125 c [typ] tc=100 c [typ] tc=75 c [typ] reverse voltage v r [v] reverse current i r [ma] 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 DE5S6M 0.3 reverse power dissipation tj = 150 c sin 0.2 0.5 d=0.05 dc 0.1 0.8 reverse voltage v r [v] reverse power dissipation p r [w] 0 t p v r t d=t p /t 0 t p i o t d=t p /t 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 DE5S6M 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 DE5S6M 0.3 derating curve v r = 30v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r case temperature tc [ c] average rectified forward current i o [a] 0 t p i o t d=t p /t 0 1 2 3 4 5 0 20 40 60 80 100 120 140 160 DE5S6M 0.3 derating curve v r = 20v sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r ambient temperature ta [ c] average rectified forward current i o [a] alumina substrate alumina base soldering land (leads) 1.5mm 2.5mm soldering land (heatsink) 7mm 7mm conductor layer 20 m substrate thickness 0.64mm 0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 DE5S6M derating curve v r = 30v sin d=0.8 dc 0 v r self-supported glass-epoxy substrate soldering land 2mm f lead length 9.5mm pcb thickness 1.6mm ambient temperature ta [ c] average rectified forward current i o [a] peak surge forward capability 0 50 100 150 1 10 100 DE5S6M 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=125 c before surge current is applied t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp 0 20 40 60 80 100 120 0 50 100 150 sbd repetitive surge reverse power derating curve junction temperature tj [ c] p rrsm derating [%] 0.1 1 10 1 10 100 sbd repetitive surge reverse power capability pulse width t p [ m s] p rrsm (t p ) / p rrsm (t p =10 m s) ratio t p i rp 0 v r 0.5i rp v rp i r p rrsm = i rp v rp |
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